Effect of edge vacancies on performance of planar graphene tunnel field-effect transistor
نویسندگان
چکیده
منابع مشابه
effect of oral presentation on development of l2 learners grammar
this experimental study has been conducted to test the effect of oral presentation on the development of l2 learners grammar. but this oral presentation is not merely a deductive instruction of grammatical points, in this presentation two hypotheses of krashen (input and low filter hypotheses), stevicks viewpoints on grammar explanation and correction and widdowsons opinion on limited use of l1...
15 صفحه اولA Computational Study on the Performance of Graphene Nanoribbon Field Effect Transistor
Despite the simplicity of the hexagonal graphene structure formed by carbon atoms, the electronic behavior shows fascinating properties, giving high expectation for the possible applications of graphene in the field. The Graphene Nano-Ribbon Field Effect Transistor (GNRFET) is an emerging technology that received much attention in recent years. In this paper, we investigate the device performan...
متن کاملthe effect of explicit teaching of textual metadiscourse on esap reading comprehension performance of iranian university students
چکیده ندارد.
15 صفحه اولPerformance Analysis of Double Hetero-gate Tunnel Field Effect Transistor
A hetero gate dielectric low band gap material DG Tunnel FET is presented here. The investigated device is almost free from short channel effects like DIBL and t V rolloff. Simulation of the device characteristics shows significant improvement over conventional double gate TFET when compared interms of on current, ambipolar current, roll-off, miller capacitance and, device delay time. Simulatio...
متن کاملEffect of Edge Roughness on Static Characteristics of Graphene Nanoribbon Field Effect Transistor
In this paper, we present a physics-based analytical model of GNR FET, which allows for the evaluation of GNR FET performance including the effects of line-edge roughness as its practical specific non-ideality. The line-edge roughness is modeled in edge-enhanced band-to-band-tunneling and localization regimes, and then verified for various roughness amplitudes. Corresponding to these two regime...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: EPL (Europhysics Letters)
سال: 2017
ISSN: 0295-5075,1286-4854
DOI: 10.1209/0295-5075/118/27003